IRFP460LC DATASHEET PDF

IRFPLC Vishay / Siliconix MOSFET N-Chan V 20 Amp datasheet, inventory, & pricing. IRFPLC, SiHFPLC IRFPLC, SiHFPLC . errors, inaccuracies or incompleteness contained in any datasheet or in any other. IRFPLC V Single N-channel HexFET Power MOSFET in a TOAC Package. Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced V .

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Vishay product could result in personal injury or death. Vishay Intertechnology Electronic Components Datasheet. Pulsed Drain Current a.

These device improvements combined with the proven. The TO is similar but superior to the.

IRFPLC Datasheet(PDF) – International Rectifier

Operating Junction and Storage Temperature Range. The TO is similar but superior to the.

Repetitive rating; pulse width limited by maximum junction temperature see fig. The TO package is preferred for commercial-industrial.

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IRFP 460 LC

All other trademarks are the property of their respective owners. Repetitive rating; pulse width limited by maximum junction temperature see fig.

These device improvements combined with the proven. Repetitive Avalanche Energy a.

IRFPLC Datasheet(PDF) – Vishay Siliconix

Soldering Recommendations Peak Temperature. Elcodis is a trademark of Elcodis Company Ltd. Copy your embed code and put on your site: Utilizing advanced Power MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings.

The TO package is preferred for commercial-industrial. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part Repetitive Avalanche Current a.

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Download datasheet 2Mb Share this page. These device improvements combined with the proven ruggedness and reliabiltity of Power MOSFETs offer the designer a new standard in power transistors for switching applications.

Current sampling resistors Fig. Drain Current Charge Fig. The TO is similar but superior to the earlier TO package because its isolated mounting hole. The TO package is preferred for commercial-industrial applications where higher power datashet preclude the use of TO devices. TO package because its isolated mounting hole.

Vary t to obtain p required I AS D. Single Pulse Avalanche Energy b. Temperature C Vishay Siliconix www.